1017969

Solid-state micrologic elements

Gault, N. ; Nall, J.

Fairchild Semiconductor Corp., Palo Alto, Calif.

9

1

1962

111

111

Boundary conditions; Charge carrier density; Delay lines; Diffusion processes; Fabrication; Frequency; Germanium; Impedance; Inductance; Integrated circuit interconnections; Passivation; Silicon; Solid state circuits; Stability; Temperature; Tuners; Voltage;

English

Electron Devices, IRE Transactions on

ieee

0096-2430

jour

10.1109/T-ED.1962.14910

1473138