Title :
Extremely narrow linewidth ( approximately 1 MHz) and high-power DFB lasers grown by MOVPE
Author :
Kondo, Yuta ; Sato, Kiminori ; Nakao, Masahiro ; Fukuda, Motohisa ; Oe, Katsutoshi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
A suitable structure of narrow linewidth DFB laser is studied experimentally. By thinning the active layer to around 0.07 mu m, controlling kappa L to 1.0, and improving the geometrical uniformity of active region, the linewidth less than 1 MHz is achieved at an output power of around 20 mW in 1.55 mu m DFB lasers with 1.2 mm long cavity length.
Keywords :
distributed feedback lasers; semiconductor junction lasers; vapour phase epitaxial growth; 0.07 micron; 1.55 micron; 20 mW; active layer; cavity length; geometrical uniformity; linewidth; narrow linewidth DFB laser; output power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890128
