• DocumentCode
    1017975
  • Title

    Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm

  • Author

    Akiba, Shigeyuki ; Sakai, Kenji ; Matsushima, Y. ; Yamamoto, Takayuki

  • Author_Institution
    KDD Research & Development Laboratories, Tokyo, Japan
  • Volume
    15
  • Issue
    19
  • fYear
    1979
  • Firstpage
    606
  • Lastpage
    607
  • Abstract
    Room-temperature c.w. operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1.56 μm. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 mA for a 17 μm wide oxide-defined stripe laser.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; CW operation; InGaAsP/InP heterostructure lasers; liquid phase epitaxial growth; melt back; optical communication equipment; semiconductor function lasers; silical fibres;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790435
  • Filename
    4256043
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017975