Title :
Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm
Author :
Akiba, Shigeyuki ; Sakai, Kenji ; Matsushima, Y. ; Yamamoto, Takayuki
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
Room-temperature c.w. operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1.56 μm. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 mA for a 17 μm wide oxide-defined stripe laser.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; CW operation; InGaAsP/InP heterostructure lasers; liquid phase epitaxial growth; melt back; optical communication equipment; semiconductor function lasers; silical fibres;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790435
