Title :
Low-threshold (Ga,In)(As,P) D.H. lasers emitting at 1.55 μm grown by L.P.E.
Author :
Henshall, G.D. ; Greene, P.D.
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
Abstract :
Threshold current densities as low as 2.13 kA cm-2 have been achieved in broad-contact double-heterostructure lasers with an emission wavelength of 1.55 μm. The three-layer structure was grown by liquid-phase epitaxy and contained a quaternary active layer 0.6 μm thick and a p-type quaternary upper confining layer with a bandgap of 1.05 eV. The normalised threshold current density was 3.5 kA cm-2 μm-1.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; optical communication equipment; semiconductor junction lasers; (Ga,In)(As,P) DH lasers; emission wavelength; p type quaternary layer; quaternary active layer; semiconductor function DH lasers, LPE; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790443
