Title :
Electrochemical carrier concentration profiling in silicon
Author :
Sharpe, C.D. ; Lilley, P. ; Elliott, C.R. ; Ambridge, T.
Author_Institution :
University of Manchester, Electrical Engineering Laboratories, Manchester, UK
Abstract :
The application to silicon of an electrochemical technique, allowing automatic profiling over large depths and a wide range of carrier concentration, is described.
Keywords :
carrier density; elemental semiconductors; semiconductor-electrolyte boundaries; silicon; Si; anodic dissolution; capacitance voltage measurements; compound semiconductors; electrochemical carrier concentration profiling; electrochemical dissolution process; electrolytic Schottky barrier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790444
