Title :
Automatic electrochemical profiling of Hall mobility in semiconductors
Author :
Ambridge, T. ; Allen, C.J.
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
High-resolution automatic profiling of Hall mobility in semiconductors is achieved through the use of an electrolytic contact, both as a Schottky gate and as a means of controlled dissolution. Application to multilayer m.b.e. GaAs is shown as an example.
Keywords :
Hall effect; III-V semiconductors; carrier mobility; gallium arsenide; semiconductor-electrolyte boundaries; GaAs; Schottky gate; anodic dissolution; carrier mobility; electrochemical Hall mobility profiling; electrolytic contact; semiconductor electrolyte boundaries;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790461
