• DocumentCode
    1018247
  • Title

    Automatic electrochemical profiling of Hall mobility in semiconductors

  • Author

    Ambridge, T. ; Allen, C.J.

  • Author_Institution
    Post Office Research Centre, Ipswich, UK
  • Volume
    15
  • Issue
    20
  • fYear
    1979
  • Firstpage
    648
  • Lastpage
    650
  • Abstract
    High-resolution automatic profiling of Hall mobility in semiconductors is achieved through the use of an electrolytic contact, both as a Schottky gate and as a means of controlled dissolution. Application to multilayer m.b.e. GaAs is shown as an example.
  • Keywords
    Hall effect; III-V semiconductors; carrier mobility; gallium arsenide; semiconductor-electrolyte boundaries; GaAs; Schottky gate; anodic dissolution; carrier mobility; electrochemical Hall mobility profiling; electrolytic contact; semiconductor electrolyte boundaries;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790461
  • Filename
    4256078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018247