DocumentCode
1018264
Title
Operation of SOI CMOS devices at liquid-nitrogen temperature
Author
Young, K.K. ; Tsaur, Bor-Yeu
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
Volume
11
Issue
3
fYear
1990
fDate
3/1/1990 12:00:00 AM
Firstpage
126
Lastpage
128
Abstract
Liquid-nitrogen-temperature (LNT) operation of silicon-on-insulator (SOI) CMOS devices has been investigated experimentally. The maximum carrier mobilities in these devices increase by factors from 1.25 to 4.5 between room temperature and LNT. At LNT, the increase in depletion-layer width and the resulting threshold-voltage increase are limited by the silicon film thickness. For SOI devices with a body contact, the series resistance between channel and body contact increases at lower temperature, resulting in a current kink in saturation I-V characteristics.<>
Keywords
CMOS integrated circuits; carrier mobility; semiconductor-insulator boundaries; SOI CMOS devices; body contact; carrier mobilities; current kink; depletion-layer width; liquid-nitrogen temperature; saturation I-V characteristics; series resistance; threshold-voltage increase; Immune system; Laboratories; MOSFET circuits; Plasma measurements; Plasma temperature; Scattering; Semiconductor films; Silicon; Substrates; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.46955
Filename
46955
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