Title :
Operation of SOI CMOS devices at liquid-nitrogen temperature
Author :
Young, K.K. ; Tsaur, Bor-Yeu
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
Liquid-nitrogen-temperature (LNT) operation of silicon-on-insulator (SOI) CMOS devices has been investigated experimentally. The maximum carrier mobilities in these devices increase by factors from 1.25 to 4.5 between room temperature and LNT. At LNT, the increase in depletion-layer width and the resulting threshold-voltage increase are limited by the silicon film thickness. For SOI devices with a body contact, the series resistance between channel and body contact increases at lower temperature, resulting in a current kink in saturation I-V characteristics.<>
Keywords :
CMOS integrated circuits; carrier mobility; semiconductor-insulator boundaries; SOI CMOS devices; body contact; carrier mobilities; current kink; depletion-layer width; liquid-nitrogen temperature; saturation I-V characteristics; series resistance; threshold-voltage increase; Immune system; Laboratories; MOSFET circuits; Plasma measurements; Plasma temperature; Scattering; Semiconductor films; Silicon; Substrates; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
