Title :
Preliminary c.w. reliability measurements on GaAs-(GaAl)As stripe lasers grown by metal-organic c.v.d.
Author :
Thrush, E.J. ; Whiteaway, J.E.A.
Author_Institution :
Standard Telecommunication Laboratories, Harlow, UK
Abstract :
Oxide-insulated 20 ¿m planar stripe-geometry lasers were fabricated from a double heterostructure GaAs-(GaAl)As wafer grown by metal-organic chemical vapour deposition. Preliminary c.w. life tests have been carried out on these lasers, and 1400 h of operation has been achieved with only 19% increase in threshold current.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; reliability; semiconductor junction lasers; CW reliability measurements; GaAs-(GaAl)As DH stripe lasers; metal organic CVD; semiconductor junction lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790473
