Title :
Room-temperature c.w. operation of InP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μm
Author :
Kawaguchi, H. ; Takahei, K. ; Toyoshima, Y. ; Nagai, H. ; Iwane, G.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Room-temperature c.w. operation has been achieved for stripe-geometry double heterostructure InP/InGaAsP/InP diode lasers emitting at 1.55 μm. The heterostructures were grown by l.p.e. on (100) InP substrates, and stripes were defined by the conventional planar-stripe structure. The room-temperature (20°C) c.w. threshold current ≅250 mA for a 6 μm wide by 200 μm long cavity.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; InP/InGaAsP/InP diode lasers; cavity; double heterostructure; liquid phase epitaxy; optical fibres; planar stripe structure; room temperature c.w. operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790475
