• DocumentCode
    1018432
  • Title

    Improved ohmic properties of Au-Ge Contacts to thin n-GaAs layers alloyed with an SiO2 overlayer

  • Author

    Vidimari, F.

  • Author_Institution
    CISE SpA, Segrate, Italy
  • Volume
    15
  • Issue
    21
  • fYear
    1979
  • Firstpage
    674
  • Lastpage
    676
  • Abstract
    The contact resistivity of Au-Ge contacts on n-type GaAs was reduced by about one order of magnitude by replacing the usual Ni top layer with an SiO2 layer. Surface coverage and edge definition of the contact areas can be optimised by proper choice of process parameters, making this technology suitable for submicrometre device processing.
  • Keywords
    III-V semiconductors; gallium arsenide; germanium alloys; gold alloys; ohmic contacts; AuGe contacts; SiO2 overlayer; contact areas; edge definition; ohmic properties; process parameters; resistivity; submicrometre device processing; surface coverage; thin n-GaAs layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790479
  • Filename
    4256097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018432