Accurate noise measurements on transistors

This paper is concerned with a method of noise measurement which permits improved accuracy by circumventing some of the problems of the usual comparison techniques. Results are presented of measurements of Ieqand Rnshowing good agreement between theory and experiment. It is suggested that noise measurements may be a very satisfactory method of determining the effective base resistance for inhomogeneous structures. The theoretical representation of the noise sources, including the effect of generation-recombination in the emitter-base region, is summarized in the appendix.