Title :
Planar domain walls in the vicinity on ion implanted bars
Author :
Arnaud, L. ; Thiaville, A. ; Klein, D. ; Engemann, J. ; Arnaud, Laurent ; Thiaville, Andre ; Klein, David ; Engemann, J.
Author_Institution :
IEEE TMAG
fDate :
9/1/1986 12:00:00 AM
Abstract :
Ion implantation seems to be an appropriate technique to perform stripe domain stabilization needed for Bloch Line Memory (B.L.M.) in which stripe domains are used as storage loops for Bloch lines pairs. Confinement of stripes under Ne+ ion implanted rectangular patterns are studied in
Keywords :
Magnetic bubble memories; Magnetic stripe domains; Bars; Capacitive sensors; Extremities; Garnets; Ion implantation; Magnetic heads; Predictive models; Saturation magnetization; Stress; X-ray diffraction;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1986.1064533
