• DocumentCode
    1018567
  • Title

    Pumped Schottky diodes with noise temperatures of less than 100 K at 115 GHz

  • Author

    Keen, Nigel J. ; Kelly, William M. ; Wrixon, Gerard T.

  • Author_Institution
    Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany
  • Volume
    15
  • Issue
    21
  • fYear
    1979
  • Firstpage
    689
  • Lastpage
    690
  • Abstract
    New Schottky-barrier diodes, with an epitaxial layer thickness of < 1000 Å and doping 2.5×1016 cm¿3, yield a mixer noise temperature of 98 K at 115 GHz. The diodes have a diameter of 1.8 ¿m, and show repeatable performance. Measurements indicate negligible capacitance variation to at least +0.2 V. The noise temperature is competitive with values reported for Josephson and quasiparticle junctions.
  • Keywords
    Schottky-barrier diodes; mixers (circuits); solid-state microwave devices; Schottky barrier diodes; capacitance variations; doping; epitaxial layer; mixer noise temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790490
  • Filename
    4256108
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018567