Title :
Comparison of GaAs IMPATT designs for 20 GHz
Author :
Berenz, J.J. ; Vichr, M. ; Fank, F.B.
Author_Institution :
Varian Associates, Palo Alto, USA
Abstract :
GaAs IMPATT diodes have been developed to deliver high c.w. powers in K-band. Single-drift and double-drift flat profile and single-drift Read profile designs have been evaluated. The highest conversion efficiencies were obtained with the high/low Read doping profile. A maximum c.w. power of 3.1 W has been measured at 19.6 GHz with 18.6% efficiency for these devices.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; 20 GHz; CW powers; GaAs IMPATT diodes; K-band; continuous wave powers; conversion efficiencies; double drift flat profile; high Read doping profile; low Read doping profile; single drift Read profile; single drift flat profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790494
