Title :
Mg-doped InGaAsP/InP l.e.d.s for high-bit-rate optical-communication systems
Author :
Grothe, H. ; Proebster, W. ; Harth, W.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Abstract :
The design criteria for high-speed luminescent diodes are applied to realise InGaAsP/InP l.e.d.s at 1.26 ¿m wavelength. By highly doping the active region with Mg, a modulation bandwidth in excess of 1 GHz is achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; magnesium; optical communication equipment; 1 GHz; InGaAsP-InP:Mg; heterojunction structure LED; high bit rate optical communication systems; light emitting diodes; modulation bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790499
