• DocumentCode
    1018666
  • Title

    Mg-doped InGaAsP/InP l.e.d.s for high-bit-rate optical-communication systems

  • Author

    Grothe, H. ; Proebster, W. ; Harth, W.

  • Author_Institution
    Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
  • Volume
    15
  • Issue
    22
  • fYear
    1979
  • Firstpage
    702
  • Lastpage
    703
  • Abstract
    The design criteria for high-speed luminescent diodes are applied to realise InGaAsP/InP l.e.d.s at 1.26 ¿m wavelength. By highly doping the active region with Mg, a modulation bandwidth in excess of 1 GHz is achieved.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; magnesium; optical communication equipment; 1 GHz; InGaAsP-InP:Mg; heterojunction structure LED; high bit rate optical communication systems; light emitting diodes; modulation bandwidth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790499
  • Filename
    4256120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018666