DocumentCode :
1018668
Title :
Si/SiGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration
Author :
Schreiber, H.-U. ; Bosch, B.G. ; Kasper, Erich ; Kibbel, H.
Author_Institution :
Inst. fur Elektron., Ruhr-Univ. Bochum, West Germany
Volume :
25
Issue :
3
fYear :
1989
Firstpage :
185
Lastpage :
186
Abstract :
A Si/Si0.8Ge0.2 heterojunction bipolar transistor was fabricated having emitter, base and collector contacts at the wafer surface. The base doping concentration amounted to 1019/cm3 which was 20 times the emitter concentration. Due to the pronounced difference in bandgap energy a current gain of 17 was reached.
Keywords :
Ge-Si alloys; bipolar transistors; doping profiles; elemental semiconductors; semiconductor materials; silicon; Si-Si 0.8Ge 0.2; bandgap energy; base doping; current gain; doping concentration; emitter doping concentration; heterojunction bipolar transistor; wafer surface;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890134
Filename :
130854
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1018668
بازگشت