• DocumentCode
    1018668
  • Title

    Si/SiGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration

  • Author

    Schreiber, H.-U. ; Bosch, B.G. ; Kasper, Erich ; Kibbel, H.

  • Author_Institution
    Inst. fur Elektron., Ruhr-Univ. Bochum, West Germany
  • Volume
    25
  • Issue
    3
  • fYear
    1989
  • Firstpage
    185
  • Lastpage
    186
  • Abstract
    A Si/Si0.8Ge0.2 heterojunction bipolar transistor was fabricated having emitter, base and collector contacts at the wafer surface. The base doping concentration amounted to 1019/cm3 which was 20 times the emitter concentration. Due to the pronounced difference in bandgap energy a current gain of 17 was reached.
  • Keywords
    Ge-Si alloys; bipolar transistors; doping profiles; elemental semiconductors; semiconductor materials; silicon; Si-Si 0.8Ge 0.2; bandgap energy; base doping; current gain; doping concentration; emitter doping concentration; heterojunction bipolar transistor; wafer surface;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890134
  • Filename
    130854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018668