• DocumentCode
    1018756
  • Title

    In0.53Ga0.47As p-i-n photodiodes for long-wavelength fibre-optic systems

  • Author

    Leheny, R.F. ; Nahory, R.E. ; Pollack, M.A.

  • Author_Institution
    Bell Telephone Laboratories, Holmdel, USA
  • Volume
    15
  • Issue
    22
  • fYear
    1979
  • Firstpage
    713
  • Lastpage
    715
  • Abstract
    We describe p-i-n photodiodes fabricated from In0.53Ga0.47As grown lattice-matched on InP substrates. These diodes exhibit low junction capacitance (C<1 pF at 20 V reverse bias), low dark current (¿10 nA), high break-down voltage (110 V) and wide photoresponse extending beyond 1.7 ¿m.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical fibres; photodiodes; In0.53Ga0.47As p-i-n photodiodes; InP; breakdown voltage; junction capacitance; long wavelength fibre optic systems;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790507
  • Filename
    4256128
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018756