Title :
In0.53Ga0.47As p-i-n photodiodes for long-wavelength fibre-optic systems
Author :
Leheny, R.F. ; Nahory, R.E. ; Pollack, M.A.
Author_Institution :
Bell Telephone Laboratories, Holmdel, USA
Abstract :
We describe p-i-n photodiodes fabricated from In0.53Ga0.47As grown lattice-matched on InP substrates. These diodes exhibit low junction capacitance (C<1 pF at 20 V reverse bias), low dark current (¿10 nA), high break-down voltage (110 V) and wide photoresponse extending beyond 1.7 ¿m.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fibres; photodiodes; In0.53Ga0.47As p-i-n photodiodes; InP; breakdown voltage; junction capacitance; long wavelength fibre optic systems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790507
