Title :
Submillimeter-Wave InP MMIC Amplifiers From 300–345 GHz
Author :
Pukala, D. ; Samoska, L. ; Gaier, T. ; Fung, A. ; Mei, X.B. ; Yoshida, W. ; Lee, Jeyull ; Uyeda, J. ; Liu, P.H. ; Deal, W.R. ; Radisic, V. ; Lai, R.
Abstract :
In this letter, we describe the design, fabrication, simulation, and measured performance of a single-stage and three-stage 320 GHz amplifier using Northrop Grumman Corporation´s (NGC) 35-nm InP high electron mobility transistor submillimeter-wave monolithic integrated circuit (S-MMIC) process. On-wafer S-parameter measurements using an extended waveguide band WR3 vector network analyzer system were performed from 210-345 GHz. We measured 5 dB of gain for the single-stage amplifier at 340 GHz and 13-15 of gain from 300-345 GHz for the three-stage S-MMIC amplifier.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; high electron mobility transistors; indium compounds; submillimetre wave amplifiers; submillimetre wave integrated circuits; InP; S-MMIC amplifier; S-parameter measurement; frequency 300 GHz to 345 GHz; gain; gain 5 dB; high electron mobility transistor; single-stage amplifier; submillimeter-wave monolithic integrated circuit; three-stage amplifier; Circuit simulation; Fabrication; HEMTs; Indium phosphide; Integrated circuit measurements; MMICs; MODFETs; Monolithic integrated circuits; Scattering parameters; Submillimeter wave integrated circuits; Coplanar waveguide (CPW) with ground; high electron mobility transistor (HEMT); low noise amplifier (LNA); monolithic microwave integrated circuit (MMIC); submillimeter-wave monolithic integrated circuit (S–MMIC);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.912047
