DocumentCode :
1018899
Title :
Erratum: Novel microwave GaAs field-effect transistors
Author :
Vokes, J.C. ; Hughes, B.T. ; Wight, D.R. ; Dawsey, J.R. ; Shrubb, S.J.W.
Volume :
15
Issue :
22
fYear :
1979
Firstpage :
731
Keywords :
Schottky gate field effect transistors; solid-state microwave devices; GaAs MESFET; solid state microwave devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19790522
Filename :
4256145
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1018899
