DocumentCode

1018899

Title

Erratum: Novel microwave GaAs field-effect transistors

Author

Vokes, J.C. ; Hughes, B.T. ; Wight, D.R. ; Dawsey, J.R. ; Shrubb, S.J.W.

Volume

15

Issue

22

fYear

1979

Firstpage

731

Keywords

Schottky gate field effect transistors; solid-state microwave devices; GaAs MESFET; solid state microwave devices;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19790522

Filename

4256145