DocumentCode :
1018913
Title :
Erratum: Preparation and properties of GaAs layers for novel f.e.t. structures
Author :
Griffiths, R.J.M. ; Blenkinsop, I.D. ; Wight, D.R.
Volume :
15
Issue :
22
fYear :
1979
Firstpage :
731
Keywords :
III-V semiconductors; chemical vapour deposition; field effect transistors; gallium arsenide; FET; GaAs layers; GaAs-Ga0.4Al0.6As heterostructures; etching; metal organic CVD; semi insulating GaAs substrates;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19790523
Filename :
4256146
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1018913
