Title :
Improvement of intermodulation distortion in microwave m.e.s.f.e.t. amplifiers using gate-bias compensation
Author :
Gupta, Ramesh K. ; Goud, Paul A. ; Englefield, Colin G.
Author_Institution :
University of Alberta, Department of Electrical Engineering, Edmonton, Canada
Abstract :
A simple technique is described for improving the intermodulation distortion performance of microwave m.e.s.f.e.t. amplifiers. The technique utilises transistor gate-bias compensation controlled by the input signal level of the amplifier. For a constant output power of 0 dBm, an improvement in third-order intermodulation distortion product of up to 10 dB has been observed. The advantages and limitations of the technique are discussed.
Keywords :
Schottky gate field effect transistors; compensation; electric distortion; field effect transistor circuits; intermodulation; microwave amplifiers; solid-state microwave circuits; gate bias compensation; intermodulation distortion reduction; microwave MESFET amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790530
