DocumentCode
1018922
Title
Improvement of intermodulation distortion in microwave m.e.s.f.e.t. amplifiers using gate-bias compensation
Author
Gupta, Ramesh K. ; Goud, Paul A. ; Englefield, Colin G.
Author_Institution
University of Alberta, Department of Electrical Engineering, Edmonton, Canada
Volume
15
Issue
23
fYear
1979
Firstpage
741
Lastpage
742
Abstract
A simple technique is described for improving the intermodulation distortion performance of microwave m.e.s.f.e.t. amplifiers. The technique utilises transistor gate-bias compensation controlled by the input signal level of the amplifier. For a constant output power of 0 dBm, an improvement in third-order intermodulation distortion product of up to 10 dB has been observed. The advantages and limitations of the technique are discussed.
Keywords
Schottky gate field effect transistors; compensation; electric distortion; field effect transistor circuits; intermodulation; microwave amplifiers; solid-state microwave circuits; gate bias compensation; intermodulation distortion reduction; microwave MESFET amplifiers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790530
Filename
4256147
Link To Document