Title :
Low-bandgap (1.15 eV) InGaP/InGaAs solar cell
Author :
Saxena, R.R. ; Moon, R.L.
Author_Institution :
Varian Associates, Inc., Solid State Laboratory, Palo Alto, USA
Abstract :
The possibility of using In0.18Ga0.82As p-n junctions as a low-bandgap (1.15 eV) solar cell has been investigated. With a lattice-matched p+ In0.6Ga0.4P window layer, internal collection efficiency close to 100% has been demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; solar cells; InGap-InGaAs; Solar cell; conversion efficiency; internal collection efficiency; lattice matched InGaP window layer; low bandgap;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790587
