Title :
Injection diode with tri-stable switching characteristics
Author_Institution :
Carnegie Institute of Technology, Pittsburgh, Pa.
Keywords :
Breakdown voltage; Conductivity; Contacts; Electric breakdown; Electron devices; Etching; Germanium; Iron; Radiative recombination; Semiconductor diodes; Skin; Temperature;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15012
