A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-Ω output

Author

Bakalski, Winfried ; Simbürger, Werner ; Thüringer, Ronald ; Vasylyev, Andriy ; Scholtz, Arpad L.

Author_Institution

Infineon Corp. Res., Munich, Germany

Volume

39

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1006

Lastpage

1014

Abstract

A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.35-μm SiGe bipolar technology. The balanced two-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching. Further, it uses three coils for the integrated LC-output balun and the RF choke. Thus, the power amplifier does not require any external components. At 1.0-V, 1.5-V, and 2.4-V supply voltages, output powers of 17.7 dBm, 21.6 dBm, and 25 dBm are achieved at 5.3 GHz. The respective power-added efficiencies (PAE) are 15%, 22%, and 24%. The small-signal gain is 26 dB. The output 1-dB compression point at 2.4 V is 22 dBm with a PAE of 14%.

Keywords

baluns; bipolar integrated circuits; impedance matching; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; silicon compounds; transformers; wireless LAN; 0.3 W; 0.35 microns; 1.0 V; 1.5 V; 2.4 V; 26 dB; 4.8 to 5.7 GHz; 5.3 GHz; 50 ohms; RF choke; RF power amplifier; SiGe; balanced push-pull power amplifier; bipolar power amplifier; input-balun matching; integrated LC-output balun; interstage matching; on-chip transformers; power-added efficiencies; two-stage push-pull power amplifier; wireless LAN; Coils; Germanium silicon alloys; Impedance matching; Inductors; Power amplifiers; Power supplies; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Transformers; Balun; PAE; power amplifier; power-added efficiency; transformer; wireless LAN;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.829967

Filename

1308574