Title :
Narrow-beam high-power twin-channel laser with reduced sidelobes
Author :
Morrison, G.B. ; Zinkiewicz, L.M. ; Burghard, A. ; Figueroa, L.
Author_Institution :
TRW, Inc., Electro Optics Research Center, Redondo Beach, USA
Abstract :
We present a version of the twin-channel laser with reduced dimensions. This version has improved yields of high-power lasers (Pmax ~ 120 mW at 50% duty cycle) with single-lobe far-field distributions. These far-field patterns exhibit almost no sidelobes, a fact that can be explained by the reduced dimensions.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; GaAs-AlGaAs laser; high-power lasers; reduced sidelobes; semiconductor laser; single-lobe far-field distributions; twin-channel laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860006
