Title :
Low-current alpha in silicon transistors
Author :
Iwersen, J.E. ; Bray, A.R. ; Kleimack, J.J.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Abstract :
The well-known falloff of alpha at low current in silicon has been investigated by means of transistors with guardring emitters. It has been found that the overwhelming part of the base current (at low currents) originates at the surface edge of the emitter. When this current is well understood in terms of existing theory.
Keywords :
Atmosphere; Atmospheric measurements; Circuits; Conductivity; Doping; Electron devices; Energy measurement; Germanium; Laboratories; Silicon alloys; Telephony; Temperature distribution;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15022
