• DocumentCode
    1019129
  • Title

    Low-current alpha in silicon transistors

  • Author

    Iwersen, J.E. ; Bray, A.R. ; Kleimack, J.J.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N. J.
  • Volume
    9
  • Issue
    6
  • fYear
    1962
  • Firstpage
    474
  • Lastpage
    478
  • Abstract
    The well-known falloff of alpha at low current in silicon has been investigated by means of transistors with guardring emitters. It has been found that the overwhelming part of the base current (at low currents) originates at the surface edge of the emitter. When this current is well understood in terms of existing theory.
  • Keywords
    Atmosphere; Atmospheric measurements; Circuits; Conductivity; Doping; Electron devices; Energy measurement; Germanium; Laboratories; Silicon alloys; Telephony; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1962.15022
  • Filename
    1473250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019129