DocumentCode
1019132
Title
Ga0.47In0.53As JFETs and MESFETs with OM-VPE-grown GaAs surface layers
Author
Selders, J. ; Roentgen, P. ; Beneking, H.
Author_Institution
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Volume
22
Issue
1
fYear
1986
Firstpage
14
Lastpage
16
Abstract
Ga0.47In0.53As JFETs and MESFETs have been fabricated with a lattice-mismatched GaAs layer under the gate. The GaAs could be grown with good electrical and crystallo-graphic quality in spite of the large lattice mismatch by an OM-VPE process. Pn, Np and Schottky diodes were fabricated and applied to n-GaInAs FET channels. Both types of devices exhibited high transconductances of about 100 mS/mm.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor growth; vapour phase epitaxial growth; Ga0.47In0.53As JFETs; Ga0.47In0.53As MESFET; OM-VPE; Schottky diodes; lattice-mismatched GaAs layer; n-GaInAs FET channels; n-p diodes; p-n diodes; transconductance 100 mS/mm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860010
Filename
4256168
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