Title :
Electroluminescence from GaP p-n junctions at high injection levels
Author :
Gershenzon, M. ; Mikulyak, R.M.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N.J.
Keywords :
Absorption; Circuits; Current density; Diodes; Electrical resistance measurement; Electroluminescence; Feedback; Gallium arsenide; Infrared detectors; Laboratories; Optical reflection; P-n junctions; Radiative recombination; Relays; Solid state circuits; Spontaneous emission; Telephony;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15027
