• DocumentCode
    1019195
  • Title

    Selective Zn diffusion in n-GaAs with a sputtered Si mask at 650°C

  • Author

    Omura, E. ; Vawter, G. Allen ; Coldren, Larry ; Merz, J.L.

  • Author_Institution
    University of California, Department of Electrical & Computer Engineering, Santa Barbara, USA
  • Volume
    22
  • Issue
    1
  • fYear
    1986
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    Zinc has been selectively diffused into n-GaAs substrates with a mask of Si deposited by magnetron sputtering at room temperature. No lateral enhanced diffusion along the substrate/mask interface is observed. At the diffusion temperature of 650°C studied here, no appreciable Si diffusion into the substrate is observed.
  • Keywords
    III-V semiconductors; diffusion in solids; gallium arsenide; masks; semiconductor technology; substrates; III-V semiconductor; magnetron sputtering; n-GaAs substrates; selective Zn diffusion; sputtered Si mask;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860016
  • Filename
    4256174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019195