Title :
Lifetime modulation in p-type silicon
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Keywords :
Chemicals; Conductivity; Crystals; Diodes; Electrons; Fabrication; Flexible printed circuits; Frequency; Laboratories; P-i-n diodes; Plasma devices; Relays; Semiconductor diodes; Silicon; Steady-state; Surface waves; Telephony; Transistors;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15033
