Title :
Double injection diodes and related (DI) phenomena in semiconductors
Author :
Holonyak, N., Jr.
Author_Institution :
General Electric Company, Syracuse, N. Y.
Keywords :
Alloying; Crystals; Electrons; Frequency; Gallium arsenide; Impurities; Laboratories; Magnetic devices; Magnetic fields; P-i-n diodes; Plasma devices; Plasma measurements; Semiconductor diodes; Steady-state; Surface waves;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15035
