DocumentCode
1019292
Title
Avalanche breakdown-double injection induced negative resistance in semiconductors
Author
Steele, S. ; Ando, A. ; Lampert, L.
Author_Institution
RCA Laboratories, Tokyo, Japan
Volume
9
Issue
6
fYear
1962
Firstpage
505
Lastpage
505
Keywords
Alloying; Crystals; Electrons; Frequency; Gallium arsenide; Impurities; Laboratories; Magnetic devices; Magnetic fields; P-i-n diodes; Plasma devices; Plasma measurements; Semiconductor diodes; Steady-state; Surface waves;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1962.15038
Filename
1473266
Link To Document