Title :
Low-threshold InGaAsP/InP 1.3 μm doubly buried-heterostructure lasers with a reactive-ion-etched facet
Author :
Saito, Hiroshi ; Naguchi, Y. ; Nagai, Hiroto
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
The angled reactive-ion-etching (RIE) technique utilising a TiO2 mask and Cl2-Ar gas is successfully applied to facet mirror fabrication of 1.3 μm InGaAsP/InP doubly buried-heterostructure (DBH) lasers. A typical CW operation threshold current is 22 mA at 25°C, and light output power from one facet exceeds 20 mW. The result of the preliminary aging test is also presented.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical workshop techniques; semiconductor junction lasers; sputter etching; Cl2-Ar gas; DBM lasers; III-V semiconductors; InGaAsP/InP; TiO2 mask; aging test; angled RIE technique; doubly buried-heterostructure lasers; facet mirror fabrication; optical workshop techniques; reactive-ion-etched facet; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860025
