Title :
Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition
Author :
Dupuis, Russell ; Campbell, Joe C. ; Velebir, J.R.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
Planar InGaAs/InP heterostructure PIN photodiodes have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapour deposition. Diffused p-n junction devices of 75 ¿m diameter have low dark currents (~10 nA at ¿10 V), good quantum efficiencies (~50% without AR coatings) and response times less than 40 ps.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; vapour phase epitaxial growth; III-V semiconductors; InGaAs; MOCVD; PIN; VPE; epitaxial growth; heterostructure; metalorganic chemical vapour deposition; optical communication devices; p-i-n photodiodes; photodetectors; planar type;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860033
