• DocumentCode
    1019366
  • Title

    Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition

  • Author

    Dupuis, Russell ; Campbell, Joe C. ; Velebir, J.R.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    22
  • Issue
    1
  • fYear
    1986
  • Firstpage
    48
  • Lastpage
    50
  • Abstract
    Planar InGaAs/InP heterostructure PIN photodiodes have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapour deposition. Diffused p-n junction devices of 75 ¿m diameter have low dark currents (~10 nA at ¿10 V), good quantum efficiencies (~50% without AR coatings) and response times less than 40 ps.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; vapour phase epitaxial growth; III-V semiconductors; InGaAs; MOCVD; PIN; VPE; epitaxial growth; heterostructure; metalorganic chemical vapour deposition; optical communication devices; p-i-n photodiodes; photodetectors; planar type;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860033
  • Filename
    4256197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019366