Title :
A 4×64 pixel CMOS image sensor for 3-D measurement applications
Author :
Elkhalili, O. ; Schrey, O.M. ; Mengel, P. ; Petermann, M. ; Brockherde, W. ; Hosticka, B.J.
Author_Institution :
Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
fDate :
7/1/2004 12:00:00 AM
Abstract :
A 4×64 pixel 3-D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. The measurement range is up to 8 m with resolution of 1 cm. The scene depth is determined by measurement of the travel time of reflected laser pulses by employing a fast on-chip synchronous shutter (maximum shutter speed 30 ns). The multiple double short time integration (MDSI) algorithm enables suppression of the background illumination and correction for reflectance variations in the scene objects. The pixel size is 130×300 μm2. The sensor chip has been realized in a 0.5-μm n-well standard CMOS process.
Keywords :
CMOS image sensors; image processing equipment; measurement by laser beam; time of flight spectroscopy; 0.5 micron; 256 pixel; 3D measurement applications; 4 pixel; 64 pixel; 8 m; CMOS image sensor; CMOS imager; CMOS photo sensor; illumination suppression; laser pulses; multiple double short time Integration; on-chip synchronous shutter; pixel array; reflectance variations correction; scene depth; scene objects; time-of-flight; travel time; CMOS image sensors; Layout; Lighting; Optical pulses; Pixel; Pulse measurements; Reflectivity; Testing; Time measurement; Velocity measurement; -D; CMOS photo sensor; MDSI; image sensor; multiple double short time integration; pixel array;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.829927
