Title :
1.6-μ m Multiwavelength Emission of an InAs–InGaAsP Quantum-Dot Laser
Author :
Liu, Jiaren ; Lu, Zhenguo ; Raymond, S. ; Poole, P.J. ; Barrios, P.J. ; Poitras, D.
Author_Institution :
Nat. Res. Council Canada, Ottawa
Abstract :
A multiwavelength laser with maximum signal-to-noise ratio up to 62 dB was demonstrated on the basis of a 461-m-long InAs-InGaAsP quantum-dot waveguide Fabry-Perot cavity chip. It has 24 channels with 0.8-nm channel spacing and 8.0-dB maximum channel intensity nonuniformity over a wavelength range from 1612 to 1632 nm. Its channel spacing irregularity due to linear intracavity waveguide dispersion was also investigated.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser noise; optical dispersion; optical fabrication; quantum dot lasers; semiconductor quantum dots; Fabry-Perot cavity chip; InAs-InGaAsP; channel intensity; channel spacing irregularity; linear intracavity waveguide dispersion; multiwavelength laser; quantum-dot laser; semiconductor laser; signal-noise ratio; wavelength 1.6 mum; wavelength 1612 nm to 1632 nm; Chemical lasers; Fiber lasers; Indium phosphide; Laser mode locking; Optical waveguides; Pump lasers; Quantum dot lasers; Semiconductor lasers; Stimulated emission; Waveguide lasers; Multiwavelength laser; OCIS codes: 230.5590, 140.5960, 160.3380, 060.4510; quantum dot (QD); semiconductor laser; signal-to-noise ratio (SNR);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.912561
