Novel triode device using metal-insulator superlattice proposed for high-speed response

A novel resonant electron transfer triode (RETT), which uses electron resonant tunnelling utilising a metal-insulator multi-layer superlattice as an artificial semiconductor, is proposed. A possible high-speed response (response time of about ¿ = 0.3 ps and fT = 1/2¿¿ = 510 GHz at room temperature) is expected theoretically. It is also shown theoretically that this triode has common transistor static characteristics.