Title :
Theoretical analysis of planar bulk-acoustic-wave response
Author :
Elias, Elizabeth ; Jhunjhunwala, Ashok
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India
Abstract :
A detailed theoretical analysis for planar bulk-acoustic-wave (BAW) devices that results in a method for computing the bulk-acoustic-wave response for any orientation of any piezoelectric substrate is presented. The BAW responses for four devices is computed and are found to be in excellent agreement with published experimental results. The theory is used to optimize one of these devices by varying the thickness and interdigital transducer (IDT) separation so as to give minimum insertion loss. A similar optimization can be performed for other devices. The theory is also used to find a new BAW device with low insertion loss.<>
Keywords :
lithium compounds; piezoelectric devices; ultrasonic devices; ultrasonic reflection; LiNbO/sub 3/ device; bulk wave power density; bulk-acoustic-wave response; far field analysis; interdigital transducer separation; interface reflection; minimum insertion loss; near field analysis; optimization; piezoelectric substrate; planar bulk-acoustic-wave devices; thickness; Acoustic reflection; Acoustic transducers; Crystalline materials; Frequency; Insertion loss; Piezoelectric transducers; Rough surfaces; Surface acoustic wave devices; Surface acoustic waves; Surface roughness;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
