1019526

Conduction properties of the Au-n-type Si Schottky barrier

Kahng, D.

Bell Telephone Laboratories, Inc., Murray Hill, N. J.

9

6

1962

510

510

Capacitance; Doping; Electron devices; Electrons; Gallium arsenide; Gold; Impurities; Laboratories; Optical distortion; Schottky barriers; Schottky diodes; Semiconductor process modeling; Silicon; Temperature; Thermal conductivity; Tunneling; Voltage;

English

Electron Devices, IRE Transactions on

ieee

0096-2430

jour

10.1109/T-ED.1962.15060

1473288