Title :
Schottky barriers on silicon
Author :
Soshea, R.W. ; Atalla, M.M.
Author_Institution :
Hewlett-Packard Associates, Palo Alto, Calif.
Keywords :
Capacitance; Doping; Electrons; Gallium arsenide; Gold; Impurities; Ionization; Laboratories; Optical distortion; Schottky barriers; Schottky diodes; Silicon; Temperature; Thermal conductivity; Tunneling; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15063
