Title :
Importance of mechanical stress considerations in thin film cryogenic devices
Author :
Budo, Y. ; Priest, Judy
Author_Institution :
Thomas J. Watson Research Center, IBM Corporation, Yorktown Heights, N. Y.
Keywords :
Breakdown voltage; Capacitance; Capacitance measurement; Cryogenics; Electric breakdown; Electrons; Gold; Impact ionization; Impurities; Ionization; Silicon; Space charge; Stress; Temperature; Thermal expansion; Thermal stresses; Thin film devices;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15064
