• DocumentCode
    1019566
  • Title

    Importance of mechanical stress considerations in thin film cryogenic devices

  • Author

    Budo, Y. ; Priest, Judy

  • Author_Institution
    Thomas J. Watson Research Center, IBM Corporation, Yorktown Heights, N. Y.
  • Volume
    9
  • Issue
    6
  • fYear
    1962
  • Firstpage
    511
  • Lastpage
    511
  • Keywords
    Breakdown voltage; Capacitance; Capacitance measurement; Cryogenics; Electric breakdown; Electrons; Gold; Impact ionization; Impurities; Ionization; Silicon; Space charge; Stress; Temperature; Thermal expansion; Thermal stresses; Thin film devices;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1962.15064
  • Filename
    1473292
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019566