• DocumentCode
    1019567
  • Title

    Two-dimensional electron gas at interface of a selectively doped InGaP/GaAs heterostructure

  • Author

    Cox, H.M. ; Hayes, J.R. ; Nottenburg, R.N. ; Hummel, S. ; Allen, S. James

  • Author_Institution
    Bell Communications Research, Murray Hill, USA
  • Volume
    22
  • Issue
    2
  • fYear
    1986
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    We report the first observation of a two-dimensional electron gas at the interface of an InGaP/GaAs heterojunction. The closely lattice-matched (¿a/a¿5×10¿4) epitaxial layers of InGaP were grown by vapour levitation epitaxy using a chloride transport technique with a resulting interface sheet carrier concentration of 7×1011 cm¿2.
  • Keywords
    III-V semiconductors; electron gas; gallium arsenide; gallium compounds; indium compounds; interface electron states; semiconductor epitaxial layers; semiconductor superlattices; Cl transport; chloride transport technique; interface sheet carrier concentration; lattice-matched epitaxial layers; selectively doped InGaP/GaAs heterostructure; two-dimensional electron gas; vapour levitation epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860050
  • Filename
    4256223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019567