DocumentCode :
1019576
Title :
Capacitance and barrier potential of near-degenerate semiconductor junctions
Author :
Chang, Y.F.
Author_Institution :
Purdue University, Lafayette, Ind.
Volume :
9
Issue :
6
fYear :
1962
Firstpage :
511
Lastpage :
511
Keywords :
Breakdown voltage; Capacitance measurement; Cryogenics; Electric breakdown; Electrons; Gaussian approximation; Gold; Impact ionization; Impurities; Instruments; Ionization; Laboratories; Space charge; Spontaneous emission; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1962.15065
Filename :
1473293
Link To Document :
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