• DocumentCode
    1019576
  • Title

    Capacitance and barrier potential of near-degenerate semiconductor junctions

  • Author

    Chang, Y.F.

  • Author_Institution
    Purdue University, Lafayette, Ind.
  • Volume
    9
  • Issue
    6
  • fYear
    1962
  • Firstpage
    511
  • Lastpage
    511
  • Keywords
    Breakdown voltage; Capacitance measurement; Cryogenics; Electric breakdown; Electrons; Gaussian approximation; Gold; Impact ionization; Impurities; Instruments; Ionization; Laboratories; Space charge; Spontaneous emission; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1962.15065
  • Filename
    1473293