Title :
Electrical breakdown phenomena in gold-doped silicon
Author :
Gibbons, J.F. ; Reddi, V.K.G.
Author_Institution :
Stanford University, Stanford, Calif.
Keywords :
Breakdown voltage; Capacitance; Capacitance measurement; Cryogenics; Electric breakdown; Electrons; Gold; Impact ionization; Impurities; Ionization; Silicon; Space charge; Temperature; Thermal expansion; Thermal stresses; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15066
