Title :
Avalanche breakdown in structurally perfect junctions in silicon
Author :
Goetzberger, A. ; McDonald, Brent
Author_Institution :
Shockley Transistor, Palo Alto, Calif.
Keywords :
Avalanche breakdown; Breakdown voltage; Capacitance; Capacitance measurement; Cryogenics; Electric breakdown; Electrons; Gold; Impact ionization; Impurities; Ionization; Silicon; Space charge; Temperature; Thermal expansion; Thermal stresses; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15067
