Title :
Secondary ionization in silicon
Author :
Moll, J.L. ; Van Overstraeten, R.
Author_Institution :
Stanford University, Stanford, Calif.
Keywords :
Capacitance; Capacitance measurement; Electric breakdown; Electrons; Gold; Impact ionization; Impurities; Silicon; Space charge; Temperature; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15068
