Title :
Simple narrow-linewidth 1.5 μm InGaAsP DFB external-cavity laser
Author :
Chraplyvy, A.R. ; Liou, K.Y. ; Tkach, R.W. ; Eisenstein, Gadi ; Jhee, Y.K. ; Koch, T.L. ; Anthony, P.J. ; Chakrabarti, U.K.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
An external-cavity laser consisting of a 1.5 μm-wavelength antireflection-coated DFB laser chip, a microscope objective and a mirror provides a stable, single-frequency, narrow-linewidth (Δf=40 kHz) output. Because the laser operates in the strong feedback regime, it is immune to external optical perturbations. Single-longitudinal-mode operation is maintained by the DFB grating, and the linewidth is reduced by the extended passive cavity.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; InGaAsP DFB external-cavity laser; antireflection-coated laser chip; extended passive cavity; external optical perturbations; microscope objective; mirror; narrow-linewidth; semiconductor laser; strong feedback regime; wavelength 1.5 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860060
