Title :
Electron beam switched P-N junctions
Author_Institution :
IBM Corporation, Yorktown Heights, N. Y.
fDate :
1/1/1963 12:00:00 AM
Abstract :
A high-speed, high-power switching device is analyzed and experimental results presented. The device consists of a back-biased p-n junction switched by an electron beam. A single position tube for use as a magnetic core driver has been tested. The device operated at a beam voltage of 19 kv and can give a 150-v, 1.5-a output pulse with a rise time of less than 4 nsec and a maximum device power dissipation of 14 w. Designs for a multiposition device and also a high-power amplifier, similar in operation to the single position device are discussed.
Keywords :
Driver circuits; Electron beams; High power amplifiers; Magnetic analysis; Magnetic cores; P-n junctions; Power dissipation; Pulse amplifiers; Testing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1963.15074
