Title :
Simulation and properties of transitions to traveling-wave deflection systems
Author :
Staras, Stanislovas ; Burokas, Tomas
Author_Institution :
Radio Electron. Dept., Vilnius Gediminas Tech. Univ., Lithuania
fDate :
7/1/2004 12:00:00 AM
Abstract :
This paper is related to the super-wideband slow-wave structures, especially to the deflection systems for traveling-wave cathode-ray tubes (CRTs). Transitions to the helical deflection system of the super-wideband traveling-wave CRT are considered. The model of the circuit, containing the deflection system, is composed. As a result of analysis of the model, operation and properties of the transitions are revealed. Opportunities to improve the dynamic characteristics of the traveling-wave CRTs are considered.
Keywords :
MOSFET; Poisson equation; leakage currents; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 3D Poisson equation; back gate; boundary conditions; front gate; mesa-isolated FDSOI MOSFET; narrow width effect; short channel effect; silicon-on-insulator; small geometry; threshold voltage model; variable separation technique; Capacitance; Cathode ray tubes; Circuit simulation; Conductors; Electron beams; Electron tubes; Equivalent circuits; Strips; Waveguide transitions; Wires; CRTs; Cathode-ray tubes; electron beam deflection; helical waveguides; oscilloscopes; simulation; slow-wave structures; transitions; traveling-wave devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.829890
