A 1.5-V full-swing BiCMOS logic circuit

Author

Hiraki, Mitsuru ; Uano, K. ; Minami, Masataka ; Sato, Kazushige ; Matsuzaki, Nozomu ; Watanabe, Atsuo ; Nishida, Takashi ; Sasaki, Katsuro ; Seki, Koichi

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

27

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

1568

Lastpage

1574

Abstract

A BiCMOS logic circuit applicable to sub-2-V digital circuits has been developed. A transiently saturated full-swing BiCMOS (TS-FS-BiCMOS) logic circuit operates twice as fast as CMOS at 1.5-V supply. A newly developed transient-saturation technique, with which bipolar transistors saturate only during switching periods, is the key to sub-2-V operation because a high-speed full-swing operation is achieved to remove the voltage loss due to the base-emitter turn-on voltage. Both small load dependence and small fan-in dependence of gate delay time are attained with this technique. A two-input gate fabricated with 0.3-μm BiCMOS technology verifies the performance advantage of TS-FS-BiCMOS over other BiCMOS circuits and CMOS at sub 2-V supply

Keywords

BiCMOS integrated circuits; integrated logic circuits; 0.3 micron; 1.5 to 2 V; BiCMOS logic circuit; base-emitter turn-on voltage; bipolar transistors; high-speed full-swing operation; sub-2-V digital circuits; switching periods; transient-saturation technique; Associate members; BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; CMOS technology; Degradation; Delay effects; Logic circuits; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.165337

Filename

165337